View IHW30N60T_1115946.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IHW30N60T soft switching series q power semiconductors 1 rev. 2.1 apr. 06 low loss duopack : igbt in trenchstop technology with optimised diode features: ? very low v ce(sat) 1.5 v (typ.) ? maximum junction temperature 175 c ? short circuit withstand time ? 5 s ? trenchstop and fieldstop technology for 600 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low v ce(sat) ? positive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ applications: ? inductive cooking ? soft switching applications type v ce i c v ce(sat ),tj=25c t j,max marking package IHW30N60T 600v 30a 1.5v 175 c h30t60 pg-to-247-3-21 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current, limited by t jmax t c = 25 c t c = 100 c i c 60 30 pulsed collector current, t p limited by t jmax i cpuls 90 turn off safe operating area ( v ce 600v, t j 175 c) - 90 diode forward current t c = 25 c t c = 100 c i f 23 13 diode pulsed current, t p limited by t jmax i fpuls 30 a gate-emitter voltage transient gate-emitter voltage ( t p < 5 ms) v ge 20 25 v short circuit withstand time 2) v ge = 15v, v cc 400v, t j 150 c t sc 5 s power dissipation t c = 25 c p tot 187 w operating junction temperature t j -40...+175 storage temperature t stg -55...+175 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-247-3-21 ? ?
IHW30N60T soft switching series q power semiconductors 2 rev. 2.1 apr. 06 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.8 diode thermal resistance, junction ? case r thjcd 1.1 thermal resistance, junction ? ambient r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.5ma 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =30a t j =25 c t j =175 c - - 1.5 1.9 2 - diode forward voltage v f v ge =0v, i f =10a t j =25 c t j =150 c t j =175 c - - - 1.1 1.0 1.0 1.3 - - gate-emitter threshold voltage v ge(th) i c =0.43ma, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =175 c - - - - 40 1000 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =30a - 16.7 - s integrated gate resistor r gint - ? dynamic characteristic input capacitance c iss - 1630 - output capacitance c oss - 108 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 50 - pf gate charge q gate v cc =480v, i c =30a v ge =15v - 167 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 5 s v cc = 400v, t j = 150 c - 275 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
IHW30N60T soft switching series q power semiconductors 3 rev. 2.1 apr. 06 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 23 - rise time t r - 21 - turn-off delay time t d(off) - 254 - fall time t f - 46 - ns turn-on energy e on - - - turn-off energy e off - 0.77 - total switching energy e ts t j =25 c, v cc =400v, i c =30a, v ge =0/15v, r g =10.6 ? , l 1) =136nh, c 1) =39pf - 0.77 - mj switching characteristic, inductive load, at t j =175 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 24 - rise time t r - 26 - turn-off delay time t d(off) - 292 - fall time t f - 90 - ns turn-on energy e on - - - turn-off energy e off - 1.1 - total switching energy e ts t j =175 c, v cc =400v, i c =30a, v ge =0/15v, r g = 10.6 ? l 1) =136nh, c 1) =39pf - 1.1 - mj 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
IHW30N60T soft switching series q power semiconductors 4 rev. 2.1 apr. 06 i c , collector current 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 10s 1ms dc t p =2s 50s 10ms f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency for triangular current ( e on = 0, hard turn-off) ( t j 175 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 10 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 175 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 40w 80w 120w 160w i c , collector current 25c 75c 125c 0a 10a 20a 30a 40a 50a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 175 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 175 c) i c
IHW30N60T soft switching series q power semiconductors 5 rev. 2.1 apr. 06 i c , collector current 0v 1v 2v 3v 0a 10a 20a 30a 40a 50a 60a 70a 80a 15v 7v 9v 11v 13v v ge =20v i c , collector current 0v 1v 2v 3v 0a 10a 20a 30a 4 0a 50a 15v 13v 7v 9v 11v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 175c) i c , collector current 0v 2v 4v 6v 8v 0a 10a 20a 30a 40a 50a 25c t j =175c v ce(sat), collector - emitt saturation voltage 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =30a i c =60a i c =15a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IHW30N60T soft switching series q power semiconductors 6 rev. 2.1 apr. 06 t, switching times 0a 10a 20a 30a 1ns 10ns 100ns t r t d(on) t f t d(off) t, switching times 10? 20? 30? 40? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 10 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 30a, dynamic test circuit in figure e) t, switching times 25c 50c 75c 100c 125c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 30a, r g =10 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.43ma)
IHW30N60T soft switching series q power semiconductors 7 rev. 2.1 apr. 06 e , switching energy losses 0a 10a 20a 30a 40a 50a 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj e off e , switching energy losses 0? 10? 20? 30? 40? 0,0mj 0,5mj 1,0mj 1,5mj e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 10 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 30a, dynamic test circuit in figure e) e , switching energy losses 25c 50c 75c 100c 125c 150c 0.0mj 0.5mj 1.0mj e off e , switching energy losses 300v 350v 400v 450v 500v 550v 0,00mj 0,25mj 0,50mj 0,75mj 1,00mj 1,25mj 1,50mj 1,75mj e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 30a, r g = 10 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 30a, r g = 10 ? , dynamic test circuit in figure e)
IHW30N60T soft switching series q power semiconductors 8 rev. 2.1 apr. 06 v ge , gate - emitter voltage 0nc 30nc 60nc 90nc 120nc 150nc 180 n 0v 5v 10v 15v 480v 120v c, capacitance 0v 10v 20v 30v 40v 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =30 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( sc ) , short circuit collector current 12v 14v 16v 18v 0a 100a 200a 300a 400a t sc , short circuit withstand time 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19. typical short circuit collector current as a function of gate- emitter voltage ( v ce 400v, t j 150 c) figure 20. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c, t jmax <150c)
IHW30N60T soft switching series q power semiconductors 9 rev. 2.1 apr. 06 z thjc , transient thermal resistance 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z thjc , transient thermal resistance 10s 100s 1ms 10ms 100ms 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 21. igbt transient thermal resistance ( d = t p / t ) figure 22. diode transient thermal impedance as a function of pulse width ( d = t p / t ) i f , forward current 0.0v 0.5v 1.0v 1.5v 0a 10a 20a 30a 175c t j =25c v f , forward voltage -50c 0c 50c 100c 150c 0.0v 0.5v 1.0v 10a 3a i f =20a v f , forward voltage t j , junction temperature figure 23. typical diode forward current as a function of forward voltage figure 24. typical diode forward voltage as a function of junction temperature r ,(k/w) , (s) 0.29566 6.478*10 -2 0.25779 6.12*10 -3 0.19382 4.679*10 -4 0.05279 6.45*10 -5 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2 r ,(k/w) , (s) 0.0715 9.45*10 -2 0.2222 2.55*10 -2 0.4265 3.6*10 -3 0.364 5.1*10 -4 0.0181 1.09*10 -4 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2
IHW30N60T soft switching series q power semiconductors 10 rev. 2.1 apr. 06 pg-to247-3-21
IHW30N60T soft switching series q power semiconductors 11 rev. 2.1 apr. 06 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j 1 1 2 2 figure d. thermal equivalent circuit figure e. dynamic test circuit
IHW30N60T soft switching series q power semiconductors 12 rev. 2.1 apr. 06 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 5/31/06. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

▲Up To Search▲

Price & Availability of IHW30N60T

	To Download IHW30N60T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .